Cr:ZnSe

CLaser develops a new Q-switch crystal Cr:ZnSe for 1.4-2.0um Q-switch application. It is very good for eye-safe laser systems.

Cr doping of commercial ZnSe crystal was achieved through a thermal diffusion process employing CrSe powder as the dopant source. All samples exhibited spectral characteristic of Cr2+ doped II-VI materials with strong IR absorption, the band cover 1.4um to 2.2um and broad emission spectra from 2.0um to 3.4um. The room temperature decay time were measured to be 5-6us for Cr:ZnSe. The emission lifetime of Cr2+ ions decreased by a factor of two Cr (concentration 2.6 x 10¹⁹/cm³) for Cr:ZnSe.

Basic Data

Transmission range (um)	0.5-22
Reflection Index (1.65um)	2.455
Index via temperature (10-6/℃)	61
Melting point (℃)	1520
Rigidity (Kg/mm²)	112
Density g/cm³	5.27
Rupture Modulus (MPa)	55.2
Rupture toughness (MPa/m²)	0.5
Yangs Modulus (Gpa)	67.5

Specifications:

T0	From 60% to 98%
Dimension tolerance	(W ± 0.1 mm) x (H ± 0.1 mm)
Transmitting wavefront distortion:	l/8 @ 633 nm
Clear aperture:	> 90% central area
Flatness:	l/8 @ 633 nm
Scratch/Dig code:	10/5 to MIL-O-13830A
Parallelism:	better than 20 arc seconds
Perpendicularity:	5 arc minutes
AR coating:	R< 0.2% at 1540nm